Non-amine post-cmp composition and method of use

ABSTRACT

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.12/709,054, filed on Feb. 19, 2010, now U.S. Pat. No. 8,754,021 issuedon Jun. 17, 2014, which claims the priority of U.S. Provisional PatentApplication No. 61/156,459 for “Non-Amine Post-CMP Composition andMethod of Use,” filed on Feb. 27, 2009, in the name of Jeffrey A. Barneset al., all of which are hereby incorporated by reference in theirentirety.

FIELD

The present invention relates generally to compositions for cleaningresidue and/or contaminants from microelectronic devices having samethereon.

DESCRIPTION OF THE RELATED ART

Microelectronic device wafers are used to form integrated circuits. Themicroelectronic device wafer includes a substrate, such as silicon, intowhich regions are patterned for deposition of different materials havinginsulative, conductive or semi-conductive properties.

In order to obtain the correct patterning, excess material used informing the layers on the substrate must be removed. Further, tofabricate functional and reliable circuitry, it is important to preparea flat or planar microelectronic wafer surface prior to subsequentprocessing. Thus, it is necessary to remove and/or polish certainsurfaces of a microelectronic device wafer.

Chemical Mechanical Polishing or Planarization (“CMP”) is a process inwhich material is removed from a surface of a microelectronic devicewafer, and the surface is polished (more specifically, planarized) bycoupling a physical process such as abrasion with a chemical processsuch as oxidation or chelation. In its most rudimentary form, CMPinvolves applying slurry, e.g., a solution of an abrasive and an activechemistry, to a polishing pad that buffs the surface of amicroelectronic device wafer to achieve the removal, planarization, andpolishing processes. It is not desirable for the removal or polishingprocess to be comprised of purely physical or purely chemical action,but rather the synergistic combination of both in order to achieve fast,uniform removal. In the fabrication of integrated circuits, the CMPslurry should also be able to preferentially remove films that comprisecomplex layers of metals and other materials so that highly planarsurfaces can be produced for subsequent photolithography, or patterning,etching and thin-film processing.

Recently, copper has been increasingly used for metal interconnects inintegrated circuits. In copper damascene processes commonly used formetallization of circuitry in microelectronic device fabrication, thelayers that must be removed and planarized include copper layers havinga thickness of about 1-1.5 μm and copper seed layers having a thicknessof about 0.05-0.15 μm. These copper layers are separated from thedielectric material surface by a layer of barrier material, typicallyabout 50-300 Å thick, which prevents diffusion of copper into the oxidedielectric material. One key to obtaining good uniformity across thewafer surface after polishing is to use a CMP slurry that has thecorrect removal selectivities for each material.

The foregoing processing operations, involving wafer substrate surfacepreparation, deposition, plating, etching and chemical mechanicalpolishing, variously require cleaning operations to ensure that themicroelectronic device product is free of contaminants that wouldotherwise deleteriously affect the function of the product, or evenrender it useless for its intended function. Often, particles of thesecontaminants are smaller than 0.3 μm.

One particular issue in this respect is the residues that are left onthe microelectronic device substrate following CMP processing. Suchresidues include CMP material and corrosion inhibitor compounds such asbenzotriazole (STA). If not removed, these residues can cause damage tocopper lines or severely roughen the copper metallization, as well ascause poor adhesion of post-CMP applied layers on the device substrate.Severe roughening of copper metallization is particularly problematic,since overly rough copper can cause poor electrical performance of theproduct microelectronic device.

Another residue-producing process common to microelectronic devicemanufacturing involves gas-phase plasma etching to transfer the patternsof developed photoresist coatings to the underlying layers, which mayconsist of hardmask, interlevel dielectric (ILD), and etch stop layers.Post-gas phase plasma etch residues, which may include chemical elementspresent on the substrate and in the plasma gases, are typicallydeposited on the back end of the line (BEOL) structures and if notremoved, may interfere with subsequent silicidation or contactformation. Conventional cleaning chemistries often damage the ILD,absorb into the pores of the ILD thereby increasing the dielectricconstant, and/or corrode the metal structures.

SUMMARY

The present invention generally relates to a composition and process forcleaning residue and/or contaminants from microelectronic devices havingsaid residue and contaminants thereon. The cleaning compositions of theinvention are substantially devoid of amine and ammonium species. Theresidue may include post-CMP, post-etch, and/or post-ash residue.

In one aspect, a cleaning composition comprising at least one basicsalt, at least one organic solvent, at least one complexing agent, andwater, wherein the composition is substantially devoid of amine andammonium-containing salts is described.

In another aspect, a cleaning composition consisting essentially of atleast one basic salt, at least one organic solvent, at least onecomplexing agent, and water, wherein the composition is substantiallydevoid of amine and ammonium-containing salts is described.

In still another aspect, a cleaning composition consisting of at leastone basic salt, at least one organic solvent, at least one complexingagent, and water, wherein the composition is substantially devoid ofamine and ammonium-containing salts is described.

Another aspect relates to a kit comprising, in one or more containers,one or more of the following reagents for forming a cleaningcomposition, said one or more reagents selected from the groupconsisting of: at least one basic salt; at least one organic solvent; atleast one chelating agent; and optionally at least one surfactant;wherein the kit is adapted to form the composition.

Still another aspect relates to a method of removing residue andcontaminants from a microelectronic device having said residue andcontaminants thereon, said method comprising contacting themicroelectronic device with a cleaning composition for sufficient timeto at least partially clean said residue and contaminants from themicroelectronic device, wherein the cleaning composition includes atleast one basic salt; at least one organic solvent; at least onechelating agent; optionally at least one surfactant; and water.

Other aspects, features and advantages will be more fully apparent fromthe ensuing disclosure and appended claims.

DETAILED DESCRIPTION, AND PREFERRED EMBODIMENTS THEREOF

The present invention relates generally to compositions useful for theremoval of residue and contaminants from a microelectronic device havingsuch material(s) thereon. The compositions are particularly useful forthe removal of post-CMP, post-etch or post-ash residue.

For ease of reference, “microelectronic device” corresponds tosemiconductor substrates, flat panel displays, phase change memorydevices, solar panels and other products including solar substrates,photovoltaics, and microelectromechanical systems (MEMS), manufacturedfor use in microelectronic, integrated circuit, or computer chipapplications. Solar substrates include, but are not limited to, silicon,amorphous silicon, polycrystalline silicon, monocrystalline silicon,CdTe, copper indium selenide, copper indium sulfide, and galliumarsenide on gallium. The solar substrates may be doped or undoped. It isto be understood that the term “microelectronic device” is not meant tobe limiting in any way and includes any substrate that will eventuallybecome a microelectronic device or microelectronic assembly.

As used herein, “residue” corresponds to particles generated during themanufacture of a microelectronic device including, but not limited to,plasma etching, ashing, chemical mechanical polishing, wet etching, andcombinations thereof.

As used herein, “contaminants” correspond to chemicals present in theCMP slurry, reaction by-products of the polishing slurry, chemicalspresent in the wet etching composition, reaction by products of the wetetching composition, and any other materials that are the by-products ofthe CMP process, the wet etching, the plasma etching or the plasmaashing process.

As used herein, “post-CMP residue” corresponds to particles from thepolishing slurry, e.g., silica-containing particles, chemicals presentin the slurry, reaction by-products of the polishing slurry, carbon-richparticles, polishing pad particles, brush deloading particles, equipmentmaterials of construction particles, copper, copper oxides, organicresidues, and any other materials that are the by-products of the CMPprocess.

As defined herein, “low-k dielectric material” corresponds to anymaterial used as a dielectric material in a layered microelectronicdevice, wherein the material has a dielectric constant less than about3.5. Preferably, the low-k dielectric materials include low-polaritymaterials such as silicon-containing organic polymers,silicon-containing hybrid organic/inorganic materials, organosilicateglass (OSG), TEOS, fluorinated silicate glass (FSG), silicon dioxide,and carbon-doped oxide (CDO) glass. It is to be appreciated that thelow-k dielectric materials may have varying densities and varyingporosities.

As defined herein, “complexing agent” includes those compounds that areunderstood by one skilled in the art to be complexing agents, chelatingagents and/or sequestering agents. Complexing agents will chemicallycombine with or physically hold the metal atom and/or metal ion to beremoved using the compositions described herein.

As defined herein, the term “barrier material” corresponds to anymaterial used in the art to seal the metal lines, e.g., copperinterconnects, to minimize the diffusion of said metal, e.g., copper,into the dielectric material. Preferred barrier layer materials includetantalum, titanium, ruthenium, hafnium, tungsten, other refractorymetals and their nitrides and silicides, and combinations thereof.

As defined herein, “post-etch residue” corresponds to material remainingfollowing gas-phase plasma etching processes, e.g., BEOL dual damasceneprocessing, or wet etching processes. The post-etch residue may beorganic, organometallic, organosilicic, or inorganic in nature, forexample, silicon-containing material, carbon-based organic material, andetch gas residue such as oxygen and fluorine.

As defined herein, “post-ash residue,” as used herein, corresponds tomaterial remaining following oxidative or reductive plasma aching toremove hardened photoresist and/or bottom anti-reflective coating (BARC)materials. The post-ash residue may be organic, organometallic,organosilicic, or inorganic in nature.

“Substantially devoid” is defined herein as less than 2 wt. %,preferably less than 1 wt. %, more preferably less than 0.5 wt. %, andmost preferably less than 0.1 wt. %, based on the total weight of thecomposition.

As used herein, “about” is intended to correspond to ±5% of the statedvalue.

As used herein, “suitability” for cleaning residue and contaminants froma microelectronic device having said residue and contaminants thereoncorresponds to at least partial removal of said residue/contaminantsfrom the microelectronic device. Cleaning efficacy is rated by thereduction of objects on the microelectronic device. For example, pre-and post-cleaning analysis may be carried out using an atomic forcemicroscope. The particles on the sample may be registered as a range ofpixels. A histogram (e.g., a Sigma Scan Pro) may be applied to filterthe pixels in a certain intensity, e.g., 231-235, and the number ofparticles counted. The particle reduction may be calculated using:

${{Cleaning}\mspace{14mu} {Efficacy}} = {\frac{\begin{pmatrix}{{{Number}\mspace{14mu} {of}\mspace{14mu} {PreClean}\mspace{14mu} {Objects}} -} \\{{Number}\mspace{14mu} {of}\mspace{14mu} {PostClean}\mspace{14mu} {Objects}}\end{pmatrix}}{{Number}\mspace{14mu} {of}\mspace{14mu} {PreClean}\mspace{14mu} {Objects}} \times 100}$

Notably, the method of determination of cleaning efficacy is providedfor example only and is not intended to be limited to same.Alternatively, the cleaning efficacy may be considered as a percentageof the total surface that is covered by particulate matter. For example,AFM's may be programmed to perform a z-plane scan to identifytopographic areas of interest above a certain height threshold and thencalculate the area of the total surface covered by said areas ofinterest. One skilled in the art would readily understand that the lessarea covered by said areas of interest post-cleaning, the moreefficacious the cleaning composition. Preferably, at least 75% of theresidue/contaminants are removed from the microelectronic device usingthe compositions described herein, more preferably at least 90%, evenmore preferably at least 95%, and most preferably at least 99% of theresidue/contaminants are removed.

Compositions described herein may be embodied in a wide variety ofspecific formulations, as hereinafter more fully described.

In all such compositions, wherein specific components of the compositionare discussed in reference to weight percentage ranges including a zerolower limit, it will be understood that such components may be presentor absent in various specific embodiments of the composition, and thatin instances where such components are present, they may be present atconcentrations as low as 0.001 weight percent, based on the total weightof the composition in which such components are employed.

The cleaning compositions comprise, consist of, or consist essentiallyof at least one basic salt, at least one organic solvent, at least onecomplexing agent, and water. Preferably the water is deionized. Thecleaning composition is particularly useful for cleaning residue andcontaminants, e.g., post-CMP residue, post-etch residue, post-ashresidue, and contaminants from a microelectronic device structure.

In a further embodiment the cleaning composition comprises, consists of,or consists essentially of at least one basic salt, at least one organicsolvent, at least one complexing agent, water, and optionally at leastone surfactant.

Regardless of the embodiment, the cleaning compositions aresubstantially devoid of amine and ammonium-containing salts, e.g.,quaternary ammonium bases. In addition, the compositions prior to use,e.g., clean chemistries, are preferably devoid of at least one ofoxidizing agents; fluoride-containing sources; abrasive materials;alkaline earth metal bases; cross-linked organic polymer particles; andcombinations thereof. In addition, the cleaning compositions should notsolidify to form a polymeric solid, for example, photoresist. For thepurposes of this invention, an “amine” is defined as at least oneprimary, secondary, or tertiary amine, ammonia, and/or quaternaryammonium hydroxide compounds (e.g., ammonium hydroxide, alkylammoniumhydroxide, alkylarylammonium hydroxide, etc.), with the proviso that (i)an amide group, and (ii) species including both a carboxylic acid groupand an amine group, are not considered amines for the purposes of thisinvention. Amines for the purposes of this invention include, but arenot limited to: aliphatic primary, secondary, or tertiary amines; 4, 6,7, 8, 9 or 10-membered saturated or unsaturated amine rings;alkylammonium hydroxide compounds having the general formula R₁R₂R₃R₄NOHwhere R₁, R₂, R₃, and R₄ are the same as or different from one anotherand are hydrogen and C₁-C₆ alkyl groups (e.g., methyl, ethyl, propyl,butyl, pentyl or hexyl); alkylarylammonium hydroxide compounds have thegeneral formula R₁R₂R₃R₄NOH where R₁, R₂, R₃ and R₄ are the same as ordifferent from one another and are hydrogen, C₁-C₆ alkyl groups (e.g.,methyl, ethyl, propyl, butyl, pentyl or hexyl) and substituted orunsubstituted C₆-C₁₀ aryl groups (e.g., benzyl); and alkanolamines.

For the purposes of the composition and method described herein, the atleast one basic salt may include cesium hydroxide, rubidium hydroxide,potassium hydroxide, and combinations thereof, preferably cesiumhydroxide and/or rubidium hydroxide, even more preferably cesiumhydroxide. Preferably, the at least one basic salt is chosen so thecomposition described herein substantially maintains its initial pH evenafter several factors of dilution, e.g., diluted pH=initial pH±2 pHunits, more preferably the diluted pH=initial pH±about 1 pH unit.

The at least one organic solvent is preferably a polyol, a sulfone, orcombinations thereof, whereby the polyol can comprise at least onespecies selected from the group consisting of ethylene glycol, propyleneglycol, neopentyl glycol, glycerine (also known as glycerol), diethyleneglycol, dipropylene glycol, 1,4-butanediol, 2,3-butylene glycol,1,3-pentanediol, 1,4-pentanediol, 1,5-pentanediol, and combinationsthereof. The sulfone may comprise at least one species selected from thegroup consisting of tetramethylene sulfone (sulfolane), dimethylsulfone, diethyl sulfone, bis(2-hydroxyethyl) sulfone, methyl sulfolane,ethyl sulfolane, and combinations thereof. Preferably, the at least oneorganic solvent comprises glycerine, propylene glycol, ethylene glycol,as a single solvent or any combination of the three.

The complexing agent may comprise at least one ofethylenediaminetetraacetic acid (EDTA),1,2-cyclohexanediamine-N,N,N″,N″-tetraacetic acid (CDTA), glycine,ascorbic acid, iminodiacetic acid (IDA), nitrilotriacetic acid, alanine,arginine, asparagine, aspartic acid, cysteine, glutamic acid, glutamine,histidine, isoleucine, leucine, lysine, methionine, phenylalanine,proline, serine, threonine, tryptophan, tyrosine, valine, gallic acid,boric acid, acetic acid, acetone oxime, acrylic acid, adipic acid,betaine, dimethyl glyoxime, formic acid, fumaric acid, gluconic acid,glutaric acid, glyceric acid, glycolic acid, glyoxylic acid, isophthalicacid, itaconic acid, lactic acid, maleic acid, maleic anhydride, malicacid, malonic acid, mandelic acid, 2,4-pentanedione, phenylacetic acid,phthalic acid, proline, propionic acid, pyrocatecol, pyromellitic acid,quinic acid, sorbitol, succinic acid, tartaric acid, terephthalic acid,trimellitic acid, trimesic acid, tyrosine, xylitol, salts andderivatives thereof, and combinations thereof. Preferably, the at leastone complexing agent comprises iminodiacetic acid, boric acid, gallicacid, as a single complexing agent or any combination of the three.

Illustrative surfactants for use in the compositions described hereininclude, but are not limited to, amphoteric salts, cationic surfactants,anionic surfactants, fluoroalkyl surfactants, non-ionic surfactants, andcombinations thereof including, but not limited to, SURFONYL® 104,TRITON® CF-21, ZONYL® UR, ZONYL® FSO-100, ZONYL® FSN-100, 3M Fluoradfluorosurfactants (i.e., FC-4430 and FC-4432), dioctylsulfosuccinatesalt, 2,3-dimercapto-1-propanesulfonic acid salt, dodecylbenzenesulfonicacid, polyethylene glycols, polypropylene glycols, polyethylene orpolypropylene glycol ethers, carboxylic acid salts, R₁ benzene sulfonicacids or salts thereof (where the R₁ is a straight-chained or branchedC₈-C₁₈ alkyl group), amphiphilic fluoropolymers, polyethylene glycols,polypropylene glycols, polyethylene or polypropylene glycol ethers,carboxylic acid salts, dodecylbenzenesulfonic acid, polyacrylatepolymers, dinonylphenyl polyoxyethylene, silicone or modified siliconepolymers, acetylenic diols or modified acetylenic diols, alkylammoniumor modified alkylammonium salts, as well as combinations comprising atleast one of the foregoing surfactants, sodium dodecyl sulfate,zwitterionic surfactants, aerosol-OT (AOT) and fluorinated analoguesthereof, alkyl ammonium, perfluoropolyether surfactants,2-sulfosuccinate salts, phosphate-based surfactants, sulfur-basedsurfactants, and acetoacetate-based polymers. In a preferred embodiment,the surfactant includes an alkyl benzene sulfonic acid, more preferablydodecylbenzenesulfonic acid.

The pH of the cleaning compositions described herein is greater than 7,preferably in a range from about 8 to greater than 14, more preferablyin a range from about 8 to about 13.

In a particularly preferred embodiment, the cleaning compositioncomprises, consists of, or consists essentially of (a) cesium hydroxide,glycerine, iminodiacetic acid and water, (b) cesium hydroxide,glycerine, boric acid and water, (c) cesium hydroxide, propylene glycol,gallic acid and water, (d) cesium hydroxide, ethylene glycol,iminodiacetic acid and water, and (e) cesium hydroxide, propyleneglycol, boric acid, and water. In each case, the compositions aresubstantially devoid of amine and ammonium-containing salts, e.g.,quaternary ammonium bases; oxidizing agents; fluoride-containingsources; abrasive materials; alkaline earth metal bases; andcombinations thereof.

Examples of the compositions described herein are selected from thegroup consisting of Formulations A-R:

-   -   Formulation A: 4.0 wt % CsOH (50%), 12 wt % ethylene glycol, 0.8        wt % IDA, 83.2 wt % water, pH concentrated=12.22, pH diluted        (30:1)=10.36    -   Formulation B: 7.1 wt % CsOH (50%), 5 wt % ethylene glycol, 1.6        wt % IDA, 86.3 wt % water, pH concentrated=11.88, pH diluted        (30:1)=10.27    -   Formulation C, 5.7 wt % CsOH (50%), 12 wt % ethylene glycol, 0.8        wt % IDA, 1 wt % ascorbic acid, 80.5 wt % water, pH        concentrated=11.41, pH diluted (30:1)=9.89    -   Formulation D: 9.1 wt % CsOH (50%), 12 wt % ethylene glycol, 1.6        wt % IDA, 1 wt % ascorbic acid, 76.3 wt % water, pH        concentrated=11.16, pH diluted (30:1)=10.1    -   Formulation E: 3.9 wt % CsOH (50%), 5.0 wt % glycerine, 0.8 wt %        IDA, 90.3 wt % water, pH concentrated=12.0, pH diluted        (30:1)=10.16    -   Formulation F: 4.0 wt % CsOH (50%), 12.0 wt % glycerine, 0.8 wt        % IDA, 83.2 wt % water, pH concentrated=11.1, pH diluted        (30:1)=9.5    -   Formulation G: 7.1 wt % CsOH (50%), 5.0 wt % glycerine, 1.6 wt %        IDA, 86.3 wt % water, pH concentrated=11.5, pH diluted        (30:1)=10.29    -   Formulation H, 5.7 wt % CsOH (50%), 12.0 wt % glycerine, 0.8 wt        % IDA, 1.0 wt % ascorbic acid, 80.5 wt % water, pH        concentrated=10.8, pH diluted (30:1)=9.61    -   Formulation I: 8.8 wt % CsOH (50%), 5.0 wt % glycerine, 1.6 wt %        IDA, 1.0 wt % ascorbic acid, 83.6 wt % water, pH        concentrated=12.3, pH diluted (30:1)=10.64    -   Formulation J: 7.4 wt % CsOH (50%), 12.0 wt % glycerine, 1.6 wt        % IDA, 79.0 wt % water, pH concentrated=10.7, pH diluted        (30:1)=9.81    -   Formulation K: 6.3 wt % CsOH (50%), 4.8 wt % propylene glycol, 2        wt % gallic acid, 86.9 wt % water, pH concentrated=9.71    -   Formulation L: 6.6 wt % CsOH (50%), 10 wt % propylene glycol, 2        wt % gallic acid, 81.4 wt % water, pH concentrated=10.32    -   Formulation M: 15.7 wt % CsOH (50%), 4.8 wt % propylene glycol,        5 wt % gallic acid, 74.5 wt % water, pH concentrated=10.14    -   Formulation N, 16.2 wt % CsOH (50%), 4.8 wt % propylene glycol,        5 wt % gallic acid, 1 wt % ascorbic acid, 73 wt % water, pH        concentrated=9.28    -   Formulation O: 2.1 wt % CsOH (50%), 8.5 wt % glycerine, 0.4 wt %        iminodiacetic acid, 89.0 wt % water    -   Formulation P: 2.5 wt % CsOH (50%), 12 wt % ethylene glycol, 0.6        wt % iminodiacetic acid, 84.9 wt % water    -   Formulation Q: 4 wt % CsOH (50%), 12 wt % glycerine, 3.3 wt %        boric acid, 80.7 wt % water, pH concentrated=7.17, pH diluted        (100:1)=8.54    -   Formulation R: 4 wt % CsOH (50%), 4.8 wt % propylene glycol, 3.3        wt % boric acid, 87.9 wt % water, pH concentrated=8.4, pH        diluted (100:1)=8.59

The concentrations of the components in a concentrate are preferably asfollows:

component preferable weight % basic salt(s) (not diluted) about 1 toabout 9 wt % organic solvent(s) about 4 to about 12 wt % complexingagent(s) about 0.1 to about 4 wt % water about 75 to about 99 wt %

With regards to compositional amounts, the weight percent ratios of eachcomponent is preferably as follows: about 0.1:1 to about 10:1 basic saltto complexing agent, preferably about 0.5:1 to about 4:1, and mostpreferably about 1:1 to about 3:1; and about 0.1:1 to about 25:1 organicsolvent to complexing agent, preferably about 1:1 to about 20:1, andmost preferably about 2:1 to about 15:1.

The range of weight percent ratios of the components will cover allpossible concentrated or diluted embodiments of the composition. Towardsthat end, in one embodiment, a concentrated cleaning composition isprovided that can be diluted for use as a cleaning solution. Aconcentrated composition, or “concentrate,” advantageously permits auser, e.g., CMP process engineer, to dilute the concentrate to thedesired strength and pH at the point of use. Dilution of theconcentrated cleaning composition may be in a range from about 1:1 toabout 2500:1, preferably about 5:1 to about 1500:1, and most preferablyabout 10:1 to about 1000:1, wherein the cleaning composition is dilutedat or just before the tool with solvent, e.g., deionized water. It is tobe appreciated by one skilled in the art that following dilution, therange of weight percent ratios of the components relative to one anothershould remain unchanged.

The compositions described herein may have utility in applicationsincluding, but not limited to, post-etch residue removal, post-ashresidue removal surface preparation, post-plating cleaning and post-CMPresidue removal.

In yet another preferred embodiment, the cleaning compositions describedherein further include residue and/or contaminants. Importantly, theresidue and contaminants may be dissolved and/or suspended in thecompositions. Preferably, the residue includes post-CMP residue,post-etch residue, post-ash residue, contaminants, or combinationsthereof. For example, the cleaning composition can comprise, consist of,or consist essentially of at least one basic salt, at least one organicsolvent, at least one complexing agent, water, optionally at least onesurfactant, and residue and/or contaminants.

The cleaning compositions are easily formulated by simple addition ofthe respective ingredients and mixing to homogeneous condition.Furthermore, the compositions may be readily formulated assingle-package formulations or multi-part formulations that are mixed ator before the point of use, e.g., the individual parts of the multi-partformulation may be mixed at the tool or in a storage tank upstream ofthe tool. The concentrations of the respective ingredients may be widelyvaried in specific multiples of the composition, i.e., more dilute ormore concentrated, and it will be appreciated that the compositionsdescribed herein can variously and alternatively comprise, consist orconsist essentially of any combination of ingredients consistent withthe disclosure herein.

Accordingly, another aspect relates to a kit including, in one or morecontainers, one or more components adapted to form the compositionsdescribed herein. The kit may include, in one or more containers, atleast one basic salt, at least one organic solvent, at least onecomplexing agent, optionally at least one surfactant, and optionallywater, for combining with additional water at the fab or the point ofuse. The containers of the kit must be suitable for storing and shippingsaid removal compositions, for example, NOWPak® containers (AdvancedTechnology Materials, Inc., Danbury, Conn., USA).

The one or more containers which contain the components of the removalcomposition preferably include means for bringing the components in saidone or more containers in fluid communication for blending and dispense.For example, referring to the NOWPak® containers, gas pressure may beapplied to the outside of a liner in said one or more containers tocause at least a portion of the contents of the liner to be dischargedand hence enable fluid communication for blending and dispense.Alternatively, gas pressure may be applied to the head space of aconventional pressurizable container or a pump may be used to enablefluid communication. In addition, the system preferably includes adispensing port for dispensing the blended removal composition to aprocess tool.

Substantially chemically inert, impurity-free, flexible and resilientpolymeric film materials, such as high density polyethylene, arepreferably used to fabricate the liners for said one or more containers.Desirable liner materials are processed without requiring co-extrusionor barrier layers, and without any pigments, UV inhibitors, orprocessing agents that may adversely affect the purity requirements forcomponents to be disposed in the liner. A listing of desirable linermaterials include films comprising virgin (additive-free) polyethylene,virgin polytetrafluoroethylene (PTFE), polypropylene, polyurethane,polyvinylidene chloride, polyvinylchloride, polyacetal, polystyrene,polyacrylonitrile, polybutylene, and so on. Preferred thicknesses ofsuch liner materials are in a range from about 5 mils (0.005 inch) toabout 30 mils (0.030 inch), as for example a thickness of 20 mils (0.020inch).

Regarding the containers for the kits, the disclosures of the followingpatents and patent applications are hereby incorporated herein byreference in their respective entireties: U.S. Pat. No. 7,188,644entitled “APPARATUS AND METHOD FOR MINIMIZING THE GENERATION OFPARTICLES IN ULTRAPURE LIQUIDS:” U.S. Pat. No. 6,698,619 entitled“RETURNABLE AND REUSABLE, BAG-IN-DRUM FLUID STORAGE AND DISPENSINGCONTAINER SYSTEM;” U.S. Patent Application No. 60/916,966 entitled“SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION” filed onMay 9, 2007 in the name of John E. Q. Hughes, and PCT/US08/63276entitled “SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION”filed on May 9, 2008 in the name of Advanced Technology Materials, Inc.

As applied to microelectronic manufacturing operations, the cleaningcompositions described herein are usefully employed to clean residue(e.g., post-CMP residue) and/or contaminants from the surface of themicroelectronic device. Importantly, the cleaning compositions do notdamage low-k dielectric materials or corrode metal interconnects on thedevice surface. Moreover, the cleaning compositions do not readilyremove silicon or silicone materials. Preferably the cleaningcompositions remove at least 85% of the residue present on the deviceprior to residue removal, more preferably at least 90%, even morepreferably at least 95%, and most preferably at least 99%.

In post-CMP residue and contaminant cleaning application, the cleaningcomposition may be used with a large variety of conventional cleaningtools such as megasonics and brush scrubbing, including, but not limitedto, Verteq single wafer megasonic Goldfinger, OnTrak systems DDS(double-sided scrubbers), SEZ or other single wafer spray rinse, AppliedMaterials Mirra-Mesa™/Reflexion™/Reflexion LK™, and Megasonic batch wetbench systems.

In use of the compositions described herein for cleaning post-CMPresidue, post-etch residue, post-ash residue and/or contaminants frommicroelectronic devices having same thereon, the cleaning compositiontypically is contacted with the device for a time of from about 5 sec toabout 10 minutes, preferably about 1 sec to 20 min, preferably about 15sec to about 5 min at temperature in a range of from about 20° C. toabout 90° C., preferably about 20° C. to about 50° C. Such contactingtimes and temperatures are illustrative, and any other suitable time andtemperature conditions may be employed that are efficacious to at leastpartially clean the post-CMP residue/contaminants from the device,within the broad practice of the method. “At least partially clean” and“substantial removal” both correspond to removal of at least 85% of theresidue present on the device prior to residue removal, more preferablyat least 90%, even more preferably at least 95%, and most preferred atleast 99%

Following the achievement of the desired cleaning action, the cleaningcomposition may be readily removed from the device to which it haspreviously been applied, as may be desired and efficacious in a givenend use application of the compositions described herein. Preferably,the rinse solution includes deionized water. Thereafter, the device maybe dried using nitrogen or a spin-dry cycle.

Advantages of the composition and method of the invention include, butare not limited to, substantial removal of particles from the surface,substantial removal of organic and metallic residues from the surface, apassivated metal, e.g., copper, surface, a substantially unmodifiedporous low-k dielectric, and low metal surface roughness. In addition,the compositions are preferably environmentally friendly.

Yet another aspect relates to the improved microelectronic devices madeaccording to the methods described herein and to products containingsuch microelectronic devices.

Another aspect relates to a recycled cleaning composition, wherein thecleaning composition may be recycled until residue and/or contaminantloading reaches the maximum amount the cleaning composition mayaccommodate, as readily determined by one skilled in the art.

A still further aspect relates to methods of manufacturing an articlecomprising a microelectronic device, said method comprising contactingthe microelectronic device with a cleaning composition for sufficienttime to clean residue and contaminants from the microelectronic devicehaving said residue and contaminants thereon, and incorporating saidmicroelectronic device into said article, using a cleaning compositiondescribed herein.

In another aspect, a method of removing post-CMP residue andcontaminants from a microelectronic device having same thereon isdescribed, said method comprising:

-   -   polishing the microelectronic device with a CMP slurry;    -   contacting the microelectronic device with a cleaning        composition comprising, consisting of or consisting essentially        of at least one basic salt, at least one organic solvent, at        least one complexing agent, optionally at least one surfactant,        and water, for a sufficient time to remove post-CMP residue and        contaminants from the microelectronic device to form a post-CMP        residue-containing composition; and    -   continuously contacting the microelectronic device with the        post-CMP residue-containing composition for a sufficient amount        of time to effect substantial cleaning of the microelectronic        device,        wherein the cleaning composition is substantially devoid of        amine and ammonium-containing salts, e.g., quaternary ammonium        bases; oxidizing agents; fluoride-containing sources; abrasive        materials; alkaline earth metal bases; and combinations thereof.

Another aspect relates to an article of manufacture comprising acleaning composition, a microelectronic device wafer, and materialselected from the group consisting of residue, contaminants andcombinations thereof, wherein the cleaning composition comprises atleast one basic salt, at least one organic solvent, at least onecomplexing agent, optionally at least one surfactant, and water, andwherein the residue comprises at least one of post-CMP residue,post-etch residue and post-ash residue.

Although the invention has been variously disclosed herein withreference to illustrative embodiments and features, it will beappreciated that the embodiments and features described hereinabove arenot intended to limit the invention, and that other variations,modifications and other embodiments will suggest themselves to those ofordinary skill in the art, based on the disclosure herein. The inventiontherefore is to be broadly construed, as encompassing all suchvariations, modifications and alternative embodiments within the spiritand scope of the claims hereafter set forth.

1.-16. (canceled)
 17. A method of removing post-chemical mechanicalpolishing (post-CMP) residue and contaminants from a microelectronicdevice having said post-CMP residue and contaminants thereon, saidmethod comprising contacting the microelectronic device with a cleaningcomposition for sufficient time to at least partially clean saidpost-CMP residue and contaminants from the microelectronic device,wherein the cleaning composition includes at least one basic salt; atleast one organic solvent; at least one chelating agent; and water,wherein the cleaning composition is substantially devoid of amine andammonium-containing salts.
 18. (canceled)
 19. The method of claim 17,wherein said contacting comprises conditions selected from the groupconsisting of: time of from about 15 seconds to about 5 minutes;temperature in a range of from about 20° C. to about 50° C.; andcombinations thereof.
 20. The method of claim 17, further comprisingdiluting the cleaning composition with solvent at or before a point ofuse.
 21. The method of claim 17, wherein the at least one basic saltcomprises a species selected from the group consisting of cesiumhydroxide, rubidium hydroxide, potassium hydroxide, and combinationsthereof.
 22. The method of claim 17, wherein the at least one basic saltcomprises cesium hydroxide.
 23. The method of claim 17, wherein the atleast one basic salt comprises a species selected from the groupconsisting of cesium hydroxide and rubidium hydroxide.
 24. The method ofclaim 17, wherein the at least one organic solvent comprises a glycol, asulfone, or a combination thereof.
 25. The method of claim 17, whereinthe at least one organic solvent comprises a species selected from thegroup consisting of ethylene glycol, propylene glycol, neopentyl glycol,glycerine, diethylene glycol, dipropylene glycol, 1,4-butanediol,2,3-butylene glycol, 1,3-pentanediol, 1,4-pentanediol, 1,5-pentanediol,tetramethylene sulfone (sulfolane), dimethyl sulfone, diethyl sulfone,bis(2-hydroxyethyl) sulfone, methyl sulfolane, ethyl sulfolane, andcombinations thereof.
 26. The method of claim 17, wherein the at leastone organic solvent comprises a species selected from the groupconsisting of ethylene glycol, propylene glycol, glycerine, andcombinations thereof.
 27. The method of claim 17, wherein the at leastone complexing agent comprises a species selected from the groupconsisting of ethylenediaminetetraacetic acid (EDTA),1,2-cyclohexanediamine-N,N,N′,N′-tetraacetic acid (CDTA), glycine,ascorbic acid, iminodiacetic acid (IDA), nitrilotriacetic acid, alanine,arginine, asparagine, aspartic acid, cysteine, glutamic acid, glutamine,histidine, isoleucine, leucine, lysine, methionine, phenylalanine,proline, serine, threonine, tryptophan, tyrosine, valine, gallic acid,boric acid, acetic acid, acetone oxime, acrylic acid, adipic acid,betaine, dimethyl glyoxime, formic acid, fumaric acid, gluconic acid,glutaric acid, glyceric acid, glycolic acid, glyoxylic acid, isophthalicacid, itaconic acid, lactic acid, maleic acid, maleic anhydride, malicacid, malonic acid, mandelic acid, 2,4-pentanedione, phenylacetic acid,phthalic acid, proline, propionic acid, pyrocatecol, pyromellitic acid,quinic acid, sorbitol, succinic acid, tartaric acid, terephthalic acid,trimellitic acid, trimesic acid, tyrosine, xylitol, salts andderivatives thereof, and combinations thereof.
 28. The method of claim17, wherein the at least one complexing agent comprises iminodiaceticacid (IDA), gallic acid, boric acid, or combinations thereof.
 29. Themethod of claim 17, wherein the cleaning compositions are substantiallydevoid of oxidizing agents; fluoride-containing sources; abrasivematerials; alkaline earth metal bases; cross-linked organic polymerparticles; and combinations thereof.
 30. The method of claim 17, whereinthe cleaning composition is selected from the group consisting of: (a)cesium hydroxide, glycerine, iminodiacetic acid and water, (b) cesiumhydroxide, glycerine, boric acid and water, (c) cesium hydroxide,propylene glycol, gallic acid and water, (d) cesium hydroxide, ethyleneglycol, iminodiacetic acid and water, and (e) cesium hydroxide,propylene glycol, boric acid, and water.
 31. The method of claim 17,wherein the cleaning composition further comprises post-CMP residue andcontaminants.
 32. The method of claim 20, wherein the cleaningcomposition is diluted in a range from about 10:1 to about 1000:1. 33.The method of claim 17, wherein the cleaning compositions do notsolidify to form a polymeric solid.
 34. The method of claim 17, furthercomprising at least one surfactant.